Markets: Diversification initiatives bearing fruit
While wireless remains IQE’s largest segment (69% of H116 revenues), the company’s longstanding initiatives to drive diversified growth are now starting to bear fruit, with the photonics segment growing 45% year-on-year in H116 and contributing 17% of overall sales. In the same way that IQE was a significant beneficiary of the stellar growth in the mobile phone industry in the past, it is likely to benefit in the future from strong growth for photonics devices. Moreover, since the range of applications within photonics is diverse, encompassing high-speed communications and numerous precision sensing applications, demand is likely to be less volatile than the wireless market, which is dominated by handsets. In the near term, top line performance will be dominated by prospects in wireless and photonics, but successful execution in power electronics could trigger a third wave of significant growth. IQE has also started to generate revenues from IP licensing. This strategy has proved successful, delivering revenue and profits growth during FY15 despite weakness in the wireless sector. In the longer term, this may open up opportunities in markets such as LED lighting where very high volumes of material are required.
Exhibit 4: Analysis of revenues by business segment
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Source: IQE, Edison Investment Research. Note: *Including Infrared.
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Wireless communications (69% H116 revenues)
Compound semiconductor material key enabler
Compound semiconductors allow electrons to travel much more quickly in them than in bulk silicon and can handle higher-voltage gradients before breaking down. This enables the creation of much higher-frequency, lower noise and more power-efficient electronic systems, which is important for mobile, satellite and wireless communications applications. In a mobile phone, the memory and data processing chips will be silicon, but the transmit and receive functions will typically be gallium arsenide (GaAs), particularly for higher-specification handsets. This is because GaAs power amplifiers are more efficient than their silicon counterparts and thus provide longer battery time.
Demand for compound semiconductors in wireless applications
According to Strategy Analytics, wireless applications currently account for slightly less than 80% of all GaAs device sales, while cellular terminals account for more than 50%. Consequently, while IQE was a significant beneficiary of the growth in the handset industry, its top line performance has fallen back since the peak in 2013. Overall growth prospects for the wireless GaAs wafer market are complicated by the fact that there are a number of contrasting structural factors at play: the size of the handset market; evolution of more complex smartphones; inventory cycles; price erosion; and chips getting smaller. IQE’s newer GaN-on-Si technology opens up complementary wireless markets including base stations, reducing its dependence on handsets.
Smartphone complexity and handset market size
In June 2016, market analysts Gartner predicted that worldwide smartphone sales growth would slow to 7% in 2016 (1.5bn units), down from 14.4% in 2015, with a CAGR of 6% between 2016 and 2020. However, the shift to higher-specification handsets requiring greater bandwidths and support for multiple bandwidth and standards will result in a higher average value of RF components per phone year-on-year (see Exhibit 5). This means that the RF market is likely to grow more quickly than the smartphone market. While we caution against making a direct link from RF market statistics to IQE’s prospects by noting that the RF market includes SOI and silicon devices as well as compound semiconductor devices, data published in January 2016 by market research company The Information Network stated that the GaAs IC (Integrated Circuit) market grew by 25% during 2015 on smartphone and the Internet of Things (IoT) momentum. In August 2016 TechNavio, a technology research and advisory company, forecast that the GaAs wafer market would grow at a CAGR close to 13% between 2016 and 2020.
Exhibit 5: Average RF content/handset
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Typical 2G |
Typical 3G |
Regional LTE |
Global LTE |
Filter content |
$0.25 |
$1.25 |
$4.00 |
$7.25 |
Switching/tuning |
$0.00 |
$0.25 |
$1.50 |
$2.25 |
Power amplifiers |
$0.30 |
$1.25 |
$2.00 |
$3.25 |
Other |
$0.00 |
$0.00 |
$0.50 |
$0.50 |
Total RF content |
$0.55 |
$2.75 |
$8.00 |
$13.25 |
Threat of SOI power amplifiers has gone away
In order to reduce the bill-of-materials cost of mobile devices, handset manufacturers have investigated implementing the power amplifiers on SOI and integrating them with other elements of the RF front end such as the amplifier controller, which historically have been implemented in silicon. For several years most GSM (2G) phones have been using silicon-based power amplifiers but this cheaper material was not suitable for 3G and 4G signals. In February 2013 Qualcomm caused a stir by announcing two SOI power amplifiers for LTE (4G) phones. While some industry pundits claimed that this product introduction showed that SOI would swiftly displace compound semiconductors, causing a collapse in the share price of compound semiconductor stocks including IQE, this gloomy prediction has not been fulfilled. Even Qualcomm now recognises that SOI technology has its limitations. When announcing the formation of a JV with TDK in January 2016, Qualcomm disclosed that it was developing both SOI and GaAs power amplifiers and it has been actively recruiting compound semiconductor experts. Given that the two technologies are likely to continue to co-exist, the important question for IQE is the probable market share for each technology, which determines potential GaAs growth. GaAs’s advantages of performance/power efficiency remain pertinent, especially as phone networks shift to higher frequencies in search of spectrum availability and battery life limitations remain an issue. A report from Strategy Analytics, published in October 2015, stated that despite headwinds from competitive technologies, ie SOI, and price erosion it still expected the GaAs RF device market to grow from an estimated $7bn in 2015 to peak at $8bn in 2018.
GaN-on-Si technology may enable IQE to take share in filter and switch markets
The exclusive agreement to licence Translucent’s cREO technology (page 10) puts IQE back on the offensive by providing a potential route to recapture share in the handset antenna switch segment, which has transitioned largely to SOI over the past few years, and to take share in the filter segment. Exhibit 5 shows that the wireless switch, filter and power amplifier markets combined are collectively three to four times the size of the market for wireless power amplifier chips alone. Management note that this technology is at the development phase with a two- to three-year time horizon.
Visibility of underlying demand is obscured by the frequent but irregular inventory build-ups and then correction cycles experienced by customers. There was significant destocking during FY15, which does not appear to have continued into H116.
IQE is currently the dominant supplier globally with over 50% market share. Following the acquisition of Kopin and RFMD’s in-house epitaxy operations, IQE now provides epitaxy services to all the major RF chip suppliers. This reduces its exposure to market share swings, which had previously resulted in revenue volatility.
IQE’s wireless revenues increased by 7% year-on-year during H116 to £43.2m, which is in line with management’s estimates of mid-single-digit market growth. The destocking that characterised H215 has stopped. Our estimates model H2 sectoral sales at similar levels to H116 (IQE no longer feels that the 45/55 H1/H2 split is valid). This is underpinned by the renewal of a long-term supply contract with a premier Tier 1 customer for epiwafer products including power amplifiers, low-noise amplifiers and switches that management estimate will contribute over $55m in revenues in FY16. In addition, IQE is winning a higher proportion of clients’ business and securing business related to new products such GaN on Si devices for base stations (with MACOM). These programme wins are supported by continuous improvements in technical performance.
Based on the Strategy Analytics report discussed earlier, we assume 2% growth in wireless revenues in FY17. This excludes any upside from roll-out of the cREO technology to recapture share in the switch segment.
Photonics (17% H116 revenues)
Compound semiconductors exhibit properties that convert light to electricity and electricity to light extremely efficiently. IQE has developed a range of epitaxial wafers based on two key technologies: vertical cavity surface emitting laser (VCSEL), which is used in data communications, consumer and industrial applications; and indium phosphide (InP), which is used in fibre to the premises (FTTP) and other short-haul optical networks.
VCSELs – the new era of laser technology
VCSELs can modulate signals at frequencies up to and exceeding 25Gbps, so are ideal for high-speed communications and precision sensing applications. They provide reliable operation at distances ranging from close proximity links (centimetres) up to 500m in data centre, enterprise and campus networks. Unlike light-emitting diodes (LEDs), which emit light from the top and sides, and edge-emitting lasers, which emit light from the side of the chip once it has been cut, VCSELs emit a beam of light at right angles to the top of the chip. This means it is possible to test the optical properties of an individual device before the wafer has been cut up and packed into individual devices, thus improving yield. Additionally, IQE is the first company to have a process for producing 6” diameter VCSEL wafers. Having a higher diameter means that more devices can be manufactured at the same time, substantially reducing cost/device. These two factors significantly reduce the cost of production, potentially enabling arrays of VCSELs to be deployed in consumer electronics devices (including gaming devices, smartphones and tablets) for laser focusing, 3D imaging, proximity sensing and gesture recognition. The reduced cost also means that it is possible to create a two-dimensional array consisting of hundreds of individual sources that collectively output a high power beam tuned to a specific frequency. This has applications in industrial illumination, 3D printing, drying and curing plastics and sintering metals. IQE is currently engaged directly with a number of OEMs (as opposed to the more common chip/component vendor relationship) on projects relating to high-volume end-markets.
InP – at the heart of fibre optic communications
Telecommunications companies are increasingly deploying passive optical networks (PONs) to deliver triple-play services including TV, voice over IP (VoIP) phone and internet service to subscribers. These networks are also referred to as FFTH (fibre to the home), FFTP (fibre to the premises) or FTTC (fibre to the curb) networks. These optical networks can deliver the much higher data rates that are essential for distribution of video and other internet services. IQE has developed a novel technique for manufacturing distributed feedback (DFB) lasers used in these short-haul (up to 20km) networks. IQE has developed a proprietary technology that has enabled it to take on InP projects that previously customers had to manufacture themselves.
IQE is currently the dominant outsource provider of epitaxy for photonics applications. This position was recognised in FY15 when IQE was appointed as key partner in a new consortium to establish the US’s first Integrated Photonics Institute for Manufacturing Innovation, providing advanced epitaxy services to the 55 industrial partners.
IQE’s photonics revenues grew by 45% during H116 to £10.7m. The company is benefiting from underlying market growth and by component vendors transitioning from a vertically integrated business model towards outsourcing wafer supply from IQE. Around half of the revenues were from VCSELs, the other half InP epitaxy. Our estimates model H2 sectoral sales at similar levels to H116. In August 2016 industry analysts Grand View Research predicted that the global photonics market would grow from over $600bn in 2015 to c $980bn by 2024. Given the market outlook and strong pipeline, we model a 17% increase during FY17, which may be revised upwards as development programmes convert to volume deliveries. Wafer prices for photonic applications are an order of magnitude higher than for wireless applications, giving a highly beneficial impact on margins.
Compound semiconductors for infrared sensing (7% H116 revenues)
Compound semiconductors containing antimonides are used to manufacture emitters and detectors of light in the infrared part of the spectrum. Historically, this has been a high-margin business focused on defence applications such as night vision equipment. IQE is able to produce the industry’s first 6” indium antimonide wafers. The move to larger diameter wafers improves the economics of production. This permits the deployment of infrared chips in high-volume applications such as the measurement of environmental pollutants from industrial processes and automotive engines; non-invasive devices to monitor levels of oxygen, sugar or alcohol in the bloodstream; stand-off detection of explosives and biological threats; and specialised free space communication systems. In April 2016 IQE announced that it had joined a new consortium to create an end-to-end supply chain for a wide range of analytical micro-sensors based on the ability to emit and detect light in the mid-infrared part of the spectrum. The European Commission and the Swiss government are collectively investing €15m in the programme. IQE’s role will be to provide consortium partners and commercial customers with a volume source of epitaxial wafers.
Following the acquisition of Galaxy Compound Semiconductors in 2010, IQE is the largest supplier of infrared epitaxy globally, with almost an 80% market share. Sectoral revenues grew by 2% year-on-year during H116 to £4.7m. Our estimates model a modest 3% rise in sectoral sales during FY17. We believe faster FY17 growth is achievable given the potential expansion into consumer applications.
Compound semiconductors for solar power
CPV (concentrated photovoltaic) solar cells use lenses or mirrors to concentrate light up to 1,000x onto a small area of semiconductor material. Compound semiconductor material is able to withstand the high temperatures involved better than silicon. Moreover, it is possible to tailor the compound semiconductor material to have multiple layers of different semiconductors, each tuned to absorb a different frequency of light and convert it to electricity. This means that a higher proportion of the incident light energy is converted to power than with conventional silicon-based solar cells.
Shift in focus to space applications
IQE and its partner, Solar Junction, are currently focused on space applications of compound semiconductor technology. For these applications the weight constraints imposed by needing to launch satellites into orbit are more important than the relative economics of deploying compound semiconductor PV (more efficient but more expensive) versus conventional solar cells, which determine terrestrial deployments. The greater efficiency of compound semiconductor PV cells gives more power, and thus more capacity for data-transmission for the same weight payload. A leading satellite manufacturer is currently qualifying Solar Junction’s compound semiconductor PV modules to power satellites. We note that smartphone vendor Kyocera has demonstrated smartphones with integrated solar panels to extend time between battery charges. This application, where efficiency is paramount, may be a potential application area for compound semiconductor PV technology.
Potential for terrestrial applications in the longer term
The partnership with Solar Junction is still being targeted to generate revenues from terrestrial applications in the longer term. Solar Junction was acquired by Taqnia, an investment vehicle of the Saudi government, in 2014. The technology is of interest to the Saudi government because low oil prices have caused a $120bn budget deficit (22% of GDP). Currently, a significant proportion of domestically produced oil is used in power generation, a proportion that is expected to increase as the kingdom industrialises to reduce its dependence on oil. Widespread utility-scale deployment of solar power would release oil for export and reduce diesel imports, which are subsidised by the government. Volume deployment of Solar Junction’s CPV modules in Saudi Arabia would fulfil several of the aims of the Saudi government’s Vision 2030 Programme: reducing oil subsidies; reducing environmental pollution; participating in emerging technologies; and improving employment opportunities.
Revenues from this sector were not material in H116, though ongoing development activities encourage management to expect good commercial progress in the next one to two years. Until IQE begins to ship meaningful volumes of the material, we will treat revenues from this sector as upside to our estimates.
Compound semiconductors for power electronics
Gallium nitride (GaN) compound semiconductor material is used for making power electronics chips because it can withstand higher voltages than silicon and is better at removing waste heat energy. Electric vehicles require high-performance power devices for their advanced power control systems, as do driverless vehicles for their highly complex sensor systems. However, GaN wafers are too expensive to be viable as a substrate material. In addition, it is currently not possible to manufacture compound semiconductor wafers with as large a diameter as silicon wafers. This means that fewer devices can be accommodated on each compound semiconductor wafer compared with a silicon wafer and that it is not possible to use efficient state-of-the-art silicon wafer handling equipment for compound semiconductor manufacturing, further increasing the relative cost compared with silicon. IQE is pioneering techniques that combine the cost-effectiveness of silicon with the enhanced properties of compound semiconductors by layering the compound semiconductor material on top of the silicon. This is not a trivial undertaking because the two materials have different crystalline lattice structures. In the absence of any intervention, the compound semiconductor layer is full of defects that degrade its electrical properties.
IQE began its development of compound semiconductor on silicon substrate in 2000, when it established the IQE silicon facility in Cardiff. The acquisition of NanoGaN in 2009 brought additional IP. In September 2015 IQE accelerated its development activity in this segment by acquiring exclusive rights to Translucent’s patented cREO (crystalline Rare Earth Oxide) technology. (Translucent is a subsidiary of ASX-listed Silex Systems.) This technique creates a buffer layer enabling GaN and other compound semiconductors to be deposited on silicon substrates in such a way that their electrical properties are not compromised. As discussed earlier, IQE intends to use this technology to recapture share in the wireless switch segment, as well as to strengthen its presence in the power electronics market. The technology has potential in all of IQE’s other key markets as well. A major milestone towards commercialising the material was reached in May 2016, when IQE announced that it had successfully transferred the cREO technology to its facility in North Carolina. The same month, IQE also announced a strategic partnership with imec, a world-leading nanoelectronics research centre, to continue the development of GaN-on-Si power devices.
Importantly, Translucent has 74 granted patents and 13 pending patents. The agreement not only accelerates IQE’s existing development programmes, but also secures IP rights, reducing the risk of IP disputes in the future.
Revenues attributable to the power semiconductor market are not material at present and are included in advanced electronics (CMOS++) revenues. Until IQE begins to ship meaningful volumes of the material, which management estimates is two to three years off, we will treat revenues from this sector as upside to our estimates. The GaN market is very attractive for IQE as it represents one of the largest growth opportunities for compound semiconductors. Market analyst Yole Développement has estimated the GaN power semiconductor device market to be worth around $10m in 2015 (note: the wafer market will be smaller), but forecasts that this will grow at an estimated 93% CAGR through 2016-20 to reach more than $300m in its baseline scenario. Infineon’s acquisition in July 2016 of Cree’s Power and RF and silicon carbide substrate businesses with the intention of extending its portfolio to include more efficient power electronics/power management devices for IoT applications as well as higher frequency RF devices emphasises the importance of compound semiconductors for delivering competitive advantage in this sector.
Compound semiconductors for advanced electronics (1% H116 revenues)
Together with a number of partners (including Intel), IQE’s CMOS++ (compound materials on silicon) business is developing technologies for creating hybrid integrated chips with areas of compound semiconductor material and traditional CMOS on a common silicon substrate. This would enable the creation of highly integrated devices combining a power amplifier in compound semiconductor with a filter and switch stack in CMOS. These developments are still in the research phase, although the Translucent acquisition has given the programme a substantial boost. Management expects this novel technology to deliver significant revenues over the next three to five years.
Licence income (6% H116 revenues)
Licence income, which totalled £3.5m in H116 (H115: nil), is a new revenue stream for IQE. At present it is generated from two JVs. The JV in Singapore is with WIN Semiconductors and Nanyang Technological University. The JV in Wales was formed in July 2015 with Cardiff University. Revenues are expected to be relatively lumpy. We expect FY16 licence revenues, which only include recurring elements, to be lower than FY15 revenues (£8.0m), which include upfront elements as well. We model FY17 licence income at FY16 levels. This additional revenue stream is likely to become more significant in the longer term if IQE’s technology is deployed in volume applications such as general-purpose LED lighting and solar power. The Translucent deal significantly boosts IQE’s ability to benefit from licensing fees because it gives access to an extensive patent portfolio, helping establish IQE’s rights to generate revenue from its IP.